Stresskontrollierter Aufbau

MEMS components based on silicon micromachining technology are often stress sensitive. Mechanical stress can result in a drift of electrical parameters, e.g. a temperature drift of critical sensor specifications. Mechanical stress can result from volume shrinkage of moulding or encapsulation polymers or is caused by thermo-mechanical mismatch to carriers or substrates that leads to mechanical load cycles, depending on the environmental conditions.
On this background, ISIT develops techniques for low stress assembly and packaging of silicon sensors and actuators. Basic work on analytical strain calculations as well as finite element modelling are of major importance.