Electrical Feedthrough Technology in Wafers
The ISIT has developed two different electrical feedthrough (via) technologies for microsystem and microelectronic applications. Vias in glass wafers are particularly suitable for optical MEMS packages and high frequency components, while dry-etched vias in silicon wafers enable a larger feedthrough hole density. Both technologies seal hermetically and are applicable on 200 mm wafers. They can be combined with contact redistribution and balling. The wafer thicknesses are typically in the range of 300 µm to 600 µm. Based on these pre-developments, customer specific solutions can be developed.