Electronica 2026

Come see our innovative developments in gallium nitride (GaN) research at the trade show! We leverage the advantageous material properties of gallium nitride, such as improved performance and efficiency, to advance our research.

Our focus is on increasing efficiency through complex device architectures: While lateral GaN structures have been the norm until now, researchers at Fraunhofer ISIT are developing vertical GaN devices.

What to expect at our booth:

• GaN Trench MOSFETs: Insights into the development of vertical devices that enable a significant reduction in form factor compared to lateral structures while maintaining the same voltage class.
• Full-service technology expertise: Presentation of our GaN process technologies and modeling services across the entire value chain, from precise modeling and robustness analysis at the wafer level to pilot production on 200-mm wafers.
• Application scenarios: Discuss the use of these technologies in IT infrastructure, electromobility, and modern industrial drives with our researchers.

Visit our researchers at their booth to learn more about these exciting developments.

For more details, please see our data sheet.

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