Fraunhofer Institute for Silicon Technology

Microelectronics and Microsystems Technology in Itzehoe#

Welcome to Fraunhofer ISIT, the specialist in development, manufacturing and integration of components in microelectronics and microsystems technology. On the following pages you can find information about Fraunhofer ISIT and different possibilities of cooperating with our institute.

Service Offer#

Power Electronics

Development and production of innovative active and passive power semiconductor devices based on silicon and gallium nitride.

Micro Manufacturing
Processes

Industrialization, quality and reliability of individual cleanroom processes, process platforms such as wafer-level packaging, and devices.

MEMS Applications

Microelectromechanical systems (MEMS) development: The focus here is on the design, development and manufacture of MEMS components.

News#

5.5.2021

Fraunhofer Prize 2021 for ISIT scientists Martin Witt, Michael Kampmann and Dr. Jacqueline Atanelov, IMS nanofabrication

Since 1978, the Fraunhofer-Gesellschaft has awarded the prize annually for outstanding scientific achievements by its employees.

24.3.2021

ISIT scientist Dr. Simon Fichtner awarded Hugo-Geiger-Prize

Every year, the Free State of Bavaria together with the Fraunhofer-Gesellschaft awards the Hugo Geiger Prize, honoring young scientists for outstanding doctoral achievements in the field of applied research. This year, ISIT scientist Dr. Simon Fichtner received the first prize. 

MEMS cleanroom | 360° degree tour

Virtually discover our modern cleanroom as a 360° degree tour.

Webinars at ISIT

The Fraunhofer ISIT webinars offer you an interactive insight into current R&D topics and technology applications.

Current research highlights#

Ferroelectricity in AlScN: Newly discovered material property promises major leaps in development

Fraunhofer ISIT, Fraunhofer IAF and CAU Kiel jointly explore potential technical applications for microsystems and microelectronics

Development of GaN devices for power electronics

Fraunhofer ISIT develops innovative power devices based on gallium nitride (GaN).GaN offers a number of advantages over silicon for the production of power devices. GaN power switches are central elements for power electronic modules, e.g. power converters in electrically powered vehicles or in photovoltaic and wind energy systems, and they help to make these systems significantly more powerful and durable.

 

Lithium accumulator development

In addition to batteries for special customer-specific applications, Fraunhofer ISIT presents a modular battery system consisting of an extremely robust high-performance battery ("Li-Booster") and fast-response, high-performance battery electronics. Such systems are used, for example, in electric vehicles to provide additional power reserves for short-term power-hungry driving phases or to stabilize the grid in power grids.

MEMS speakers for mobile communication devices and in-ear headphones

Fraunhofer ISIT has developed a new generation of miniaturized loudspeakers manufactured using silicon technology. In contrast to conventional electrodynamic micro loudspeakers, the new chip loudspeakers are based on powerful piezo-electric MEMS drives and are characterized by acoustically high quality, small size, favorable manufacturing costs and low energy consumption.

Annual report 2020

Here you can find the latest annual report.

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