Fraunhofer Institute for Silicon Technology
Fraunhofer Institute for Silicon Technology

© Fraunhofer ISIT / photocompany, Itzehoe

IGBTs

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The challenges in the field of power electronics lie in the need to improve the efficiency of semiconductor power devices, especially insulated gate bipolar transistors (IGBTs). At voltages above 400 V, switching and conduction characteristics must be optimized to meet the requirements of modern electric drives.

The most compact electric drive in the world

Our approach focuses on developing ultra-thin field-stop IGBTs to increase efficiency. We are also working on adapting advanced assembly techniques that enable better integration into modular electric drive systems, as researched in the ATEM InMOVE flagship project.

The technologies used in the development of IGBTs and modular electric drives include innovative materials and manufacturing techniques. These technologies aim to increase the power density of electric machines and optimize the efficiency of the entire drive concept.

IGBT: Specifications and technical details

Expand table tab on the right:

Specification of the IGBT

Parameter Target value Layout
Temperature     25°C 125°C 150°C 175°C  
Voltage
 [V] 1200          
Rated currentInom [A] 200          
Frequency f [kHz] 13,5 Module coarse specification  
VCEsat (Trade-Off Rg = 1 Ω) dependet [V]   1,95 2,2 2,24 x IE-IGBT
Series resistorRG Ω 1          
Mechanical dimensions:
Chip dimensions [mm2] 15,92 x 12,01    
Gate-Pad Position   Rim center
          
Chip-surface (without Gate) (PAD) [mm2] 153          
Chip thickness [µm] 120-140          
1) Power dissipation: from data sheet reference module, internal Rg = 4,7, RGoff = 0,91 Ω, 30 nH, 25°C)
Eon (1200 V, 200 A) [mJ]   10,5 1)
        
Eof (1200 V, 200 A) [mJ]   11 1)        
Etot = Eon + Eoff [mJ]   21,5 1)        
Short circuit time, tsc     with IE: 7,5 µs (150°C, 800V) without IE: max 7 µs (25°, 900 v)        
Metallization structure              
Front [µm] tbd. Sinterable: Ni-Au or Ni-Pd-Au elektroless        
Back [µm]   Ti 50 / Ni 100 / Ag 1000        
Technical details of the module superstructures

Technology STD IEP5 IEP5 IEP4
Module design

Lead-Frame

5 µm Pitch open module

Lead-Frame

5 µm Pitch open module

"Mold modules"

5 µm  

"Mold modules"

4 µm
1. Modul series (Mod1) 2. Modul series (Mod2)
 3. Modul series (Mod3)
 4. Modul series (Mod4)
Superstructure technology, front   Aluminum wire bond on N/Au or Al Aluminum wire bond on Ni/Au or Al DBB on Ni/Au Cu Wire bond on DBB DBB on Ni/Au Cu Wire bond on DBB
Superstructure technology, back Ti/Ni/Ag +Sintering on DCB Ti/Ni/Ag +Sintering on DCB Ti/Ni/ag + Sintering on DCB Ti/Ni/Ag + Sintering on DCB
IGBT STD 1. Generation IEPS 2. Generation IEPS 3. Generation
 IEP4 5. Generation
Rg, IGBT_intern 0,7 Ω 0,7 Ω 0,7 Ω 0,7 Ω
Metal: Emitter
 Ni/Au Ni/Au Ni/Au Ni/Au
Metal: Collector Ti/Ni/Ag
 Ti/Ni/Ag Ti/Ni/Ag Ti/Ni/Ag
Diode: Metal: Anode SMIKORN, SKCD_81_C_120_I4F
Al Al Ni/Au Ni/Au
Metal: Cathode solderable, Ni/Ag solderable, Ni/Ag solderable, Ni/Ag solderable, Ni/Ag

Examples of applications for the new drive concepts include implementation in areas with high speeds and modular drive systems used in the automotive industry, industrial applications, and renewable energy research.

The advantages of using these new technologies include improved efficiency, higher power density, cost reductions through optimized manufacturing processes, and improved adaptability to different applications and market needs.