Fraunhofer Institute for Silicon Technology
© Fraunhofer ISIT / photocompany, Itzehoe
IGBTs
The most compact electric drive in the world
ur lighthouse project on this topic is ATEM InMOVE - a joint project of the various partners from science and industry. As part of the project, the participating companies researched technologies for a drive concept for modular distributed electric drives of high speed and thus high power density on the part of the e-machine.
IGBT: Specifications and technical details
Expand table tab on the right:
Specification of the IGBT
| Parameter | Target value | Layout | |||||
|---|---|---|---|---|---|---|---|
| Temperature | 25°C | 125°C | 150°C | 175°C | |||
| Voltage |
[V] | 1200 | |||||
| Rated currentInom | [A] | 200 | |||||
| Frequency f | [kHz] | 13,5 | Module coarse specification | ||||
| VCEsat (Trade-Off Rg = 1 Ω) dependet | [V] | 1,95 | 2,2 | 2,24 | x | IE-IGBT | |
| Series resistorRG | Ω | 1 | |||||
| Mechanical dimensions: | |||||||
| Chip dimensions | [mm2] | 15,92 x 12,01 | |||||
| Gate-Pad Position | Rim center |
||||||
| Chip-surface (without Gate) (PAD) | [mm2] | 153 | |||||
| Chip thickness | [µm] | 120-140 | |||||
| 1) Power dissipation: from data sheet reference module, internal Rg = 4,7, RGoff = 0,91 Ω, 30 nH, 25°C) | |||||||
| Eon (1200 V, 200 A) | [mJ] | 10,5 1) |
|||||
| Eof (1200 V, 200 A) | [mJ] | 11 1) | |||||
| Etot = Eon + Eoff | [mJ] | 21,5 1) | |||||
| Short circuit time, tsc | with IE: 7,5 µs (150°C, 800V) without IE: max 7 µs (25°, 900 v) | ||||||
| Metallization structure | |||||||
| Front | [µm] | tbd. | Sinterable: Ni-Au or Ni-Pd-Au elektroless | ||||
| Back | [µm] | Ti 50 / Ni 100 / Ag 1000 | |||||
Technical details of the module superstructures
| Technology | STD | IEP5 | IEP5 | IEP4 |
|---|---|---|---|---|
| Module design | Lead-Frame 5 µm Pitch open module |
Lead-Frame 5 µm Pitch open module |
"Mold modules" 5 µm |
"Mold modules" 4 µm |
| 1. Modul series (Mod1) | 2. Modul series (Mod2) |
3. Modul series (Mod3) |
4. Modul series (Mod4) | |
| Superstructure technology, front | Aluminum wire bond on N/Au or Al | Aluminum wire bond on Ni/Au or Al | DBB on Ni/Au Cu Wire bond on DBB | DBB on Ni/Au Cu Wire bond on DBB |
| Superstructure technology, back | Ti/Ni/Ag +Sintering on DCB | Ti/Ni/Ag +Sintering on DCB | Ti/Ni/ag + Sintering on DCB | Ti/Ni/Ag + Sintering on DCB |
| IGBT | STD 1. Generation | IEPS 2. Generation | IEPS 3. Generation |
IEP4 5. Generation |
| Rg, IGBT_intern | 0,7 Ω | 0,7 Ω | 0,7 Ω | 0,7 Ω |
| Metal: Emitter |
Ni/Au | Ni/Au | Ni/Au | Ni/Au |
| Metal: Collector | Ti/Ni/Ag |
Ti/Ni/Ag | Ti/Ni/Ag | Ti/Ni/Ag |
| Diode: Metal: Anode | SMIKORN, SKCD_81_C_120_I4F | |||
| Al | Al | Ni/Au | Ni/Au | |
| Metal: Cathode | solderable, Ni/Ag | solderable, Ni/Ag | solderable, Ni/Ag | solderable, Ni/Ag |
