Electrical Characterization

The Fraunhofer ISIT disposes of a professional lab for electrical characterization of semiconductors on wafer-, PCB- and module-level.

All established methods of static- and dynamic characteristics are performed. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leakage current.  Failure Analysis with scanning electron microscope (SEM) and focused ion beam (FIB) systems are additional techniques offered by ISIT.