Electrical Characterization

Manufacturers and developers are faced with the task of precisely characterizing semiconductor components at the wafer, PCB, and module levels, both statically and dynamically, and locating weak points with pinpoint accuracy. This is the only way to minimize failures and maximize the reliability of electronic assemblies.

Fraunhofer ISIT provides you with a professional measurement technology platform that covers all common methods of electrical characterization and also integrates state-of-the-art analysis methods:

  • Static and dynamic parameter measurements (IV/CV, pulse measurements, Rds(on), switching characteristics)
  • Fault analysis with lock-in IR microthermography for hot spot detection
  • Structural analysis using scanning electron microscopy (SEM) and focused ion beam (FIB)
  • Tests at wafer, PCB, and module level – all available 24/7 at the ISIT site
 

Discover our MEMS clean room virtually!

Development and production at one location: 24/7

  • Wafer-level tests: IV/CV characteristics, pulse and temperature-dependent measurements
  • PCB & modules: Functional tests under real operating conditions, voltage resistance, switching cycles
  • Lock-in IR microthermography: Localization of thermal anomalies
  • SEM & FIB: Surface analyses, precise cross sections and material characterization
  • Virtual cleanroom tour: Online insight into our MEMS production

  • Characterization of PowerMOSFETs and IGBTs directly at wafer level
  • Fault analysis for module failures in power electronics
  • Parameter tests for analog and mixed-signal ICs
  • Qualification of MEMS sensors prior to system integration

  • Comprehensive service: development, testing, and analysis from a single source
  • Highest measurement accuracy and resolution thanks to state-of-the-art measurement technology
  • Fast troubleshooting and targeted process optimization
  • Permanent availability and virtual cleanroom tours
  • Seamless integration of characterization and production at the ISIT site