The Fraunhofer ISIT disposes of a professional lab for electrical characterization of semiconductors on wafer-, PCB- and module-level.
All established methods of static- and dynamic characteristics are performed. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leakage current. Failure Analysis with scanning electron microscope (SEM) and focused ion beam (FIB) systems are additional techniques offered by ISIT.
Fraunhofer Institute for Silicon Technology
