Fraunhofer Institute for Silicon TechnologyResearch & Development
- Investigation of the external connection mechanism for measuring the voltage drop of power semiconductors during operation
- Evaluation of different modulations in the MMC and their effects on the DC side current and on the wiring of the converter.
- Investigation of protection strategies using the temperature inference of the device based on its TSEP.
- Develop a methodology that correlates the temperature of the device and the circulating current
