The most compact electric drive in the world
The Insulated Gate Bipolar Transistor (IGBT) is the most important semiconductor power device for applications in the medium power range for voltages > 400 V. To improve its efficiency in terms of switching and on-state performance, ISIT is focusing on the development of ultra-thin field-stop IGBTs. Another aspect is the adaptation to advanced assembly techniques.
Our lighthouse project on this topic is ATEM InMOVE - a collaborative project of the various partners from academia and industry. As part of the project, the participating companies researched technologies for a drive concept for modular distributed electric drives of high speed and thus high power density on the part of the e-machine.