The increasing demands on the efficiency and performance of power electronic systems pose a considerable challenge. In high-voltage applications in particular, conventional components are often insufficient to achieve the required performance characteristics while ensuring reliable operating conditions.
To meet these challenges, we develop advanced PowerMOS transistors that are specially optimized for high-voltage applications. Through innovative design approaches and the implementation of new process technologies, our solutions offer significant improvements in efficiency and reliability in power electronic systems.
The further development of PowerMOS transistors is a key focus at ISIT, with particular emphasis on high-voltage compensated components based on the superjunction principle. New device architectures and process technologies play a decisive role in this context. System-specific PowerMOS components tailored to the respective application are a prerequisite for increasing the efficiency and reliability of power electronic systems. In combination with new assembly techniques, this results in considerable advantages in terms of robustness and service life of the overall system.
A practical example of the use of our PowerMOS transistors can be found in electric vehicle technology. Here, our high-voltage-optimized components enable efficient conversion and control of energy, resulting in improved range and performance of the vehicle.
The use of our specialized PowerMOS components offers numerous advantages, including higher efficiency, improved reliability, and longer service life for power electronic systems. These advantages contribute significantly to reducing operating costs and increasing overall performance.
Fraunhofer Institute for Silicon Technology