One main focus of the ISIT is the further development of PowerMOS transistors with the special interest lying on high voltage devices working according the Superjunction principle. In this context application specific power devices and new device architectures are special R&D areas. The development of new processes for advanced power device assembly on wafer level is a further important research topic.
Application specific PowerMOS devices adapted to the particular utilization are mandatory for enhancing the efficiency and reliability of power electronic systems. Followed by new assembly techniques, significant improvements are achieved with respect to robustness and lifetime of the overall system.