Plasma enhanced chemical vapor deposition is considered to be a special form of chemical vapor deposition (CVD). The chemical deposition is supported only by a plasma. The plasma serves as an activation for the reaction of the reactive gases. The deposition temperatures are usually between 100 and 600 °C.
Process temperature of ≤540 ° C
Process chamber:
Gases silane chamber: SiH2, N2O, NH3,N2, He, Ar, NF3, PH4 + B2H physically connected, however so far no processes
Gases TEOS chamber: TEOS, He, O2, Ar, NF3
Single sided coating, single wafer processing
Hard masking, sacrificial layers, protective layers, passivation layers, MEMS-specific processes
Silane-based processes:
TEOS based processes:
Fraunhofer Institute for Silicon Technology