Are you curious to see what we will be presenting? Find out more about our exhibits below!
Fraunhofer ISIT has developed a patented process for creating three-dimensional microstructures at wafer-level. This technology enables the integration of micromagnets, thermal insulation, and microfluidic channels into next-generation microsystems. PowderMEMS® offers significant advantages over other methods and allows for precise design of 3D structures, making it ideal for applications in magnetic MEMS, microfluidics, and microelectronics. Visit our stand to learn more about the unique possibilities of PowderMEMS® technology!
Fraunhofer ISIT presents an AMR current sensor that integrates NdFeB permanent magnets at wafer-level. This innovative technique enables a more compact design and reduces production costs by eliminating the need for external bias magnets. The ADK769 operates like conventional sensors and is suitable for various microelectronic applications.
Fraunhofer ISIT and IIS present the world's smallest back-biased 3D Hall sensor. By combining the proven HallInOne® technology with PowderMEMS® micromagnets, bias magnets are integrated directly at wafer-level. This eliminates the need for external mounting and allows for application-specific design of the bias field.
Fraunhofer ISIT offers PFAS-free, gas-permeable environmental protection caps that are integrated directly into 8” silicon wafers using the innovative PowderMEMS® process. These caps protect MEMS sensors from harmful environmental influences such as particles and moisture, while simultaneously eliminating the need for separate chip processes.
Fraunhofer Institute for Silicon Technology
