As part of the BMBF-funded project “ForMikro - Salsa”, the novel ferroelectric ceramic aluminum scandium nitride (AlScN) was established at ISIT.
Ferroelectric materials are used, among other things, as drives for MEMS and in permanent data storage devices. Until now, the lead-containing ceramic lead zirconate titanate (PZT) was the material of choice. PZT exhibits extremely high deformation, but also serious disadvantages, such as its lead content and non-linear behavior. Furthermore, integration on CMOS structures is very difficult due to high deposition temperatures. These disadvantages do not exist with alternative materials such as aluminum nitride (AlN) and AlScN. They are bipolar drivable, high-temperature and long-term stable without requiring high deposition temperatures and have significantly lower electrical losses. However, the achievable deformation is significantly smaller compared to PZT.